Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
Abstract Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that...
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| Auteurs principaux: | , , , , |
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| Format: | article |
| Langue: | EN |
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Nature Portfolio
2017
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| Accès en ligne: | https://doaj.org/article/7d91b0adca0347ebba27ecc4da875e77 |
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