Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy

Abstract Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that...

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Autores principales:	Radu Hristu, Stefan G. Stanciu, Denis E. Tranca, Efstathios K. Polychroniadis, George A. Stanciu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/7d91b0adca0347ebba27ecc4da875e77
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spelling	oai:doaj.org-article:7d91b0adca0347ebba27ecc4da875e772021-12-02T16:07:02ZIdentification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy10.1038/s41598-017-05010-y2045-2322https://doaj.org/article/7d91b0adca0347ebba27ecc4da875e772017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05010-yhttps://doaj.org/toc/2045-2322Abstract Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detect silicon carbide defects which are detrimental to device functionality. Our experiment demonstrates that polarization-resolved second harmonic generation microscopy can extend the efficiency of the “optical signature” concept as an all-optical rapid and non-destructive set of investigation methods for the differentiation between hexagonal and cubic stacking faults in silicon carbide. This technique can be used for fast and in situ characterization and optimization of growth conditions for epilayers of silicon carbide and similar materials.Radu HristuStefan G. StanciuDenis E. TrancaEfstathios K. PolychroniadisGeorge A. StanciuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Radu Hristu Stefan G. Stanciu Denis E. Tranca Efstathios K. Polychroniadis George A. Stanciu Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
description	Abstract Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detect silicon carbide defects which are detrimental to device functionality. Our experiment demonstrates that polarization-resolved second harmonic generation microscopy can extend the efficiency of the “optical signature” concept as an all-optical rapid and non-destructive set of investigation methods for the differentiation between hexagonal and cubic stacking faults in silicon carbide. This technique can be used for fast and in situ characterization and optimization of growth conditions for epilayers of silicon carbide and similar materials.
format	article
author	Radu Hristu Stefan G. Stanciu Denis E. Tranca Efstathios K. Polychroniadis George A. Stanciu
author_facet	Radu Hristu Stefan G. Stanciu Denis E. Tranca Efstathios K. Polychroniadis George A. Stanciu
author_sort	Radu Hristu
title	Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
title_short	Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
title_full	Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
title_fullStr	Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
title_full_unstemmed	Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
title_sort	identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/7d91b0adca0347ebba27ecc4da875e77
work_keys_str_mv	AT raduhristu identificationofstackingfaultsinsiliconcarbidebypolarizationresolvedsecondharmonicgenerationmicroscopy AT stefangstanciu identificationofstackingfaultsinsiliconcarbidebypolarizationresolvedsecondharmonicgenerationmicroscopy AT denisetranca identificationofstackingfaultsinsiliconcarbidebypolarizationresolvedsecondharmonicgenerationmicroscopy AT efstathioskpolychroniadis identificationofstackingfaultsinsiliconcarbidebypolarizationresolvedsecondharmonicgenerationmicroscopy AT georgeastanciu identificationofstackingfaultsinsiliconcarbidebypolarizationresolvedsecondharmonicgenerationmicroscopy
_version_	1718384785454268416

Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy

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