Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs
In this study, AlGaN/GaN heterojunction-based metal–insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) were fabricated using silicon nitride (SiN) passivation layer. This layer was deposited under the different gas ratio conditions. The effects of proton irradiation on the curren...
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| Auteurs principaux: | , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Elsevier
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/8ef21a539e9b4c9482b3cd04df2bd39a |
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