Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
Abstract A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of alumi...
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Autores principales: | , , , , , , , , , |
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Formato: | article |
Lenguaje: | EN |
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Nature Portfolio
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/9457c49591c446feaa8bc64f742f878f |
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