Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors

Abstract A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of alumi...

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Autores principales: Michael Geiger, Marion Hagel, Thomas Reindl, Jürgen Weis, R. Thomas Weitz, Helena Solodenko, Guido Schmitz, Ute Zschieschang, Hagen Klauk, Rachana Acharya
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/9457c49591c446feaa8bc64f742f878f
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