Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors

Abstract A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of alumi...

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Autores principales:	Michael Geiger, Marion Hagel, Thomas Reindl, Jürgen Weis, R. Thomas Weitz, Helena Solodenko, Guido Schmitz, Ute Zschieschang, Hagen Klauk, Rachana Acharya
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/9457c49591c446feaa8bc64f742f878f
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spelling	oai:doaj.org-article:9457c49591c446feaa8bc64f742f878f2021-12-02T17:05:45ZOptimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors10.1038/s41598-021-85517-72045-2322https://doaj.org/article/9457c49591c446feaa8bc64f742f878f2021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-85517-7https://doaj.org/toc/2045-2322Abstract A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current–voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.Michael GeigerMarion HagelThomas ReindlJürgen WeisR. Thomas WeitzHelena SolodenkoGuido SchmitzUte ZschieschangHagen KlaukRachana AcharyaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-13 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Michael Geiger Marion Hagel Thomas Reindl Jürgen Weis R. Thomas Weitz Helena Solodenko Guido Schmitz Ute Zschieschang Hagen Klauk Rachana Acharya Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
description	Abstract A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current–voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.
format	article
author	Michael Geiger Marion Hagel Thomas Reindl Jürgen Weis R. Thomas Weitz Helena Solodenko Guido Schmitz Ute Zschieschang Hagen Klauk Rachana Acharya
author_facet	Michael Geiger Marion Hagel Thomas Reindl Jürgen Weis R. Thomas Weitz Helena Solodenko Guido Schmitz Ute Zschieschang Hagen Klauk Rachana Acharya
author_sort	Michael Geiger
title	Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
title_short	Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
title_full	Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
title_fullStr	Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
title_full_unstemmed	Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
title_sort	optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/9457c49591c446feaa8bc64f742f878f
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Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors

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