Analysis of sapphire- chemical mechanical polishing using digital image processing

This study investigated the contact interface behavior between a wafer and a polishing pad in sapphire- chemical mechanical polishing (CMP) for considering the improvement of the removal rate. In our previous study we clarified that the linear velocity ratio, defined as the ratio of slurry flow velo...

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Autores principales: Michio UNEDA, Keiichi TAKANO, Koji KOYAMA, Hideo AIDA, Ken-ichi ISHIKAWA
Formato: article
Lenguaje:EN
Publicado: The Japan Society of Mechanical Engineers 2016
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Acceso en línea:https://doaj.org/article/9e50b0c0687d4608b681a3d62948f445
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