Analysis of sapphire- chemical mechanical polishing using digital image processing

This study investigated the contact interface behavior between a wafer and a polishing pad in sapphire- chemical mechanical polishing (CMP) for considering the improvement of the removal rate. In our previous study we clarified that the linear velocity ratio, defined as the ratio of slurry flow velo...

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Autores principales:	Michio UNEDA, Keiichi TAKANO, Koji KOYAMA, Hideo AIDA, Ken-ichi ISHIKAWA
Formato:	article
Lenguaje:	EN
Publicado:	The Japan Society of Mechanical Engineers 2016
Materias:	sapphire- cmp contact interface linear velocity ratio removal rate slurry film thickness contact angle of slurry Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/9e50b0c0687d4608b681a3d62948f445
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spelling	oai:doaj.org-article:9e50b0c0687d4608b681a3d62948f4452021-11-26T06:35:12ZAnalysis of sapphire- chemical mechanical polishing using digital image processing2187-974510.1299/mej.15-00509https://doaj.org/article/9e50b0c0687d4608b681a3d62948f4452016-02-01T00:00:00Zhttps://www.jstage.jst.go.jp/article/mej/3/1/3_15-00509/_pdf/-char/enhttps://doaj.org/toc/2187-9745This study investigated the contact interface behavior between a wafer and a polishing pad in sapphire- chemical mechanical polishing (CMP) for considering the improvement of the removal rate. In our previous study we clarified that the linear velocity ratio, defined as the ratio of slurry flow velocity to pad linear velocity, remarkably affected the stability of the removal rate. The effect of the linear velocity ratio was discussed from the viewpoints of the slurry type. It was found that the slurry type changed the slurry film thickness between the wafer and the polishing pad. The relationship between the slurry film thickness and the surface asperity of the polishing pad was found to affect the linear velocity and the removal rate. As a result, we concluded the linear velocity ratio was an effective parameter for considering the CMP mechanism.Michio UNEDAKeiichi TAKANOKoji KOYAMAHideo AIDAKen-ichi ISHIKAWAThe Japan Society of Mechanical Engineersarticlesapphire- cmpcontact interfacelinear velocity ratioremoval rateslurry film thicknesscontact angle of slurryMechanical engineering and machineryTJ1-1570ENMechanical Engineering Journal, Vol 3, Iss 1, Pp 15-00509-15-00509 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	sapphire- cmp contact interface linear velocity ratio removal rate slurry film thickness contact angle of slurry Mechanical engineering and machinery TJ1-1570
spellingShingle	sapphire- cmp contact interface linear velocity ratio removal rate slurry film thickness contact angle of slurry Mechanical engineering and machinery TJ1-1570 Michio UNEDA Keiichi TAKANO Koji KOYAMA Hideo AIDA Ken-ichi ISHIKAWA Analysis of sapphire- chemical mechanical polishing using digital image processing
description	This study investigated the contact interface behavior between a wafer and a polishing pad in sapphire- chemical mechanical polishing (CMP) for considering the improvement of the removal rate. In our previous study we clarified that the linear velocity ratio, defined as the ratio of slurry flow velocity to pad linear velocity, remarkably affected the stability of the removal rate. The effect of the linear velocity ratio was discussed from the viewpoints of the slurry type. It was found that the slurry type changed the slurry film thickness between the wafer and the polishing pad. The relationship between the slurry film thickness and the surface asperity of the polishing pad was found to affect the linear velocity and the removal rate. As a result, we concluded the linear velocity ratio was an effective parameter for considering the CMP mechanism.
format	article
author	Michio UNEDA Keiichi TAKANO Koji KOYAMA Hideo AIDA Ken-ichi ISHIKAWA
author_facet	Michio UNEDA Keiichi TAKANO Koji KOYAMA Hideo AIDA Ken-ichi ISHIKAWA
author_sort	Michio UNEDA
title	Analysis of sapphire- chemical mechanical polishing using digital image processing
title_short	Analysis of sapphire- chemical mechanical polishing using digital image processing
title_full	Analysis of sapphire- chemical mechanical polishing using digital image processing
title_fullStr	Analysis of sapphire- chemical mechanical polishing using digital image processing
title_full_unstemmed	Analysis of sapphire- chemical mechanical polishing using digital image processing
title_sort	analysis of sapphire- chemical mechanical polishing using digital image processing
publisher	The Japan Society of Mechanical Engineers
publishDate	2016
url	https://doaj.org/article/9e50b0c0687d4608b681a3d62948f445
work_keys_str_mv	AT michiouneda analysisofsapphirechemicalmechanicalpolishingusingdigitalimageprocessing AT keiichitakano analysisofsapphirechemicalmechanicalpolishingusingdigitalimageprocessing AT kojikoyama analysisofsapphirechemicalmechanicalpolishingusingdigitalimageprocessing AT hideoaida analysisofsapphirechemicalmechanicalpolishingusingdigitalimageprocessing AT kenichiishikawa analysisofsapphirechemicalmechanicalpolishingusingdigitalimageprocessing
_version_	1718409797313757184

Analysis of sapphire- chemical mechanical polishing using digital image processing

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