Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors

AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature variation in an effort to further advance development...

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Autores principales:	Dae-Young Jeon, Yumin Koh, Chu-Young Cho, Kyung-Ho Park
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/b5ca43ac0b4940ac8a348aef7212a5be
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id	oai:doaj.org-article:b5ca43ac0b4940ac8a348aef7212a5be
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spelling	oai:doaj.org-article:b5ca43ac0b4940ac8a348aef7212a5be2021-12-01T18:52:06ZImpact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors2158-322610.1063/5.0064823https://doaj.org/article/b5ca43ac0b4940ac8a348aef7212a5be2021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0064823https://doaj.org/toc/2158-3226AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature variation in an effort to further advance development of high-speed, high-power devices and sensors for temperature applications. Our results revealed drain current degradation caused by temperature-dependent series resistance, as well as several scattering mechanisms. In addition, a negligible surface roughness scattering effect in AlGaN/GaN HEMTs was confirmed through mobility attenuation factors.Dae-Young JeonYumin KohChu-Young ChoKyung-Ho ParkAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115203-115203-5 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Dae-Young Jeon Yumin Koh Chu-Young Cho Kyung-Ho Park Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors
description	AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature variation in an effort to further advance development of high-speed, high-power devices and sensors for temperature applications. Our results revealed drain current degradation caused by temperature-dependent series resistance, as well as several scattering mechanisms. In addition, a negligible surface roughness scattering effect in AlGaN/GaN HEMTs was confirmed through mobility attenuation factors.
format	article
author	Dae-Young Jeon Yumin Koh Chu-Young Cho Kyung-Ho Park
author_facet	Dae-Young Jeon Yumin Koh Chu-Young Cho Kyung-Ho Park
author_sort	Dae-Young Jeon
title	Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors
title_short	Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors
title_full	Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors
title_fullStr	Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors
title_full_unstemmed	Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors
title_sort	impact of temperature-dependent series resistance on the operation of algan/gan high electron mobility transistors
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/b5ca43ac0b4940ac8a348aef7212a5be
work_keys_str_mv	AT daeyoungjeon impactoftemperaturedependentseriesresistanceontheoperationofalganganhighelectronmobilitytransistors AT yuminkoh impactoftemperaturedependentseriesresistanceontheoperationofalganganhighelectronmobilitytransistors AT chuyoungcho impactoftemperaturedependentseriesresistanceontheoperationofalganganhighelectronmobilitytransistors AT kyunghopark impactoftemperaturedependentseriesresistanceontheoperationofalganganhighelectronmobilitytransistors
_version_	1718404715341938688

Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors

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