Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors
AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature variation in an effort to further advance development...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/b5ca43ac0b4940ac8a348aef7212a5be |
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