InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with <inline-formula> <tex-math notation="LaTeX">$W_{\mathrm{ fin}}$ </tex-math></inline-formula> down to 20 nm, EOT of 2.1 nm, and <inline-formula&...
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Autores principales: | , , , , , , , |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
IEEE
2018
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Materias: | |
Acceso en línea: | https://doaj.org/article/c5dab5b9ff754d93ad7d8c0994cb13d9 |
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Sumario: | In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with <inline-formula> <tex-math notation="LaTeX">$W_{\mathrm{ fin}}$ </tex-math></inline-formula> down to 20 nm, EOT of 2.1 nm, and <inline-formula> <tex-math notation="LaTeX">$L_{G} = 60$ </tex-math></inline-formula> nm shows high <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{ ON}} = 188~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$V_{DD} = 0.5$ </tex-math></inline-formula> V and <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{ OFF}} = 100$ </tex-math></inline-formula> nA/<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{ ON}}/I_{\mathrm{ OFF}} = 5 \times 10^{5}$ </tex-math></inline-formula>, DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance (<inline-formula> <tex-math notation="LaTeX">$G_{\mathrm{ m}}$ </tex-math></inline-formula>) of 1142 <inline-formula> <tex-math notation="LaTeX">$\mu \text{S}/\mu \text{m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ DS}}$ </tex-math></inline-formula> of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{ SD}}$ </tex-math></inline-formula> realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor. |
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