InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with <inline-formula> <tex-math notation="LaTeX">$W_{\mathrm{ fin}}$ </tex-math></inline-formula> down to 20 nm, EOT of 2.1 nm, and <inline-formula&...

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Autores principales:	Po-Chun Chang, Chih-Jen Hsiao, Franky Juanda Lumbantoruan, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Simon M. Sze, Edward Yi Chang
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2018
Materias:	Junctionless (JL) transistor InGaAs nMOSFETs FinFET high-k dielectric Ni-InGaAs metal source/drain Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/c5dab5b9ff754d93ad7d8c0994cb13d9
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spelling	oai:doaj.org-article:c5dab5b9ff754d93ad7d8c0994cb13d92021-11-19T00:00:39ZInGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D2168-673410.1109/JEDS.2018.2859811https://doaj.org/article/c5dab5b9ff754d93ad7d8c0994cb13d92018-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8419250/https://doaj.org/toc/2168-6734In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with <inline-formula> <tex-math notation="LaTeX">$W_{\mathrm{ fin}}$ </tex-math></inline-formula> down to 20 nm, EOT of 2.1 nm, and <inline-formula> <tex-math notation="LaTeX">$L_{G} = 60$ </tex-math></inline-formula> nm shows high <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{ ON}} = 188~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$V_{DD} = 0.5$ </tex-math></inline-formula> V and <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{ OFF}} = 100$ </tex-math></inline-formula> nA/<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{ ON}}/I_{\mathrm{ OFF}} = 5 \times 10^{5}$ </tex-math></inline-formula>, DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance (<inline-formula> <tex-math notation="LaTeX">$G_{\mathrm{ m}}$ </tex-math></inline-formula>) of 1142 <inline-formula> <tex-math notation="LaTeX">$\mu \text{S}/\mu \text{m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ DS}}$ </tex-math></inline-formula> of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{ SD}}$ </tex-math></inline-formula> realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor.Po-Chun ChangChih-Jen HsiaoFranky Juanda LumbantoruanChia-Hsun WuYen-Ku LinYueh-Chin LinSimon M. SzeEdward Yi ChangIEEEarticleJunctionless (JL) transistorInGaAs nMOSFETsFinFEThigh-k dielectricNi-InGaAsmetal source/drainElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 6, Pp 856-860 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Junctionless (JL) transistor InGaAs nMOSFETs FinFET high-k dielectric Ni-InGaAs metal source/drain Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Junctionless (JL) transistor InGaAs nMOSFETs FinFET high-k dielectric Ni-InGaAs metal source/drain Electrical engineering. Electronics. Nuclear engineering TK1-9971 Po-Chun Chang Chih-Jen Hsiao Franky Juanda Lumbantoruan Chia-Hsun Wu Yen-Ku Lin Yueh-Chin Lin Simon M. Sze Edward Yi Chang InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
description	In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with <inline-formula> <tex-math notation="LaTeX">$W_{\mathrm{ fin}}$ </tex-math></inline-formula> down to 20 nm, EOT of 2.1 nm, and <inline-formula> <tex-math notation="LaTeX">$L_{G} = 60$ </tex-math></inline-formula> nm shows high <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{ ON}} = 188~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$V_{DD} = 0.5$ </tex-math></inline-formula> V and <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{ OFF}} = 100$ </tex-math></inline-formula> nA/<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm{ ON}}/I_{\mathrm{ OFF}} = 5 \times 10^{5}$ </tex-math></inline-formula>, DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance (<inline-formula> <tex-math notation="LaTeX">$G_{\mathrm{ m}}$ </tex-math></inline-formula>) of 1142 <inline-formula> <tex-math notation="LaTeX">$\mu \text{S}/\mu \text{m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ DS}}$ </tex-math></inline-formula> of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{ SD}}$ </tex-math></inline-formula> realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor.
format	article
author	Po-Chun Chang Chih-Jen Hsiao Franky Juanda Lumbantoruan Chia-Hsun Wu Yen-Ku Lin Yueh-Chin Lin Simon M. Sze Edward Yi Chang
author_facet	Po-Chun Chang Chih-Jen Hsiao Franky Juanda Lumbantoruan Chia-Hsun Wu Yen-Ku Lin Yueh-Chin Lin Simon M. Sze Edward Yi Chang
author_sort	Po-Chun Chang
title	InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
title_short	InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
title_full	InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
title_fullStr	InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
title_full_unstemmed	InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
title_sort	ingaas junctionless finfets with self-aligned ni-ingaas s/d
publisher	IEEE
publishDate	2018
url	https://doaj.org/article/c5dab5b9ff754d93ad7d8c0994cb13d9
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InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

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