Thermal Stability of SiBCN Films

Thermal Stability of SiBCN Films

Silicon-Boron-Carbon-Nitride (SiBCN) thin films were deposited on Si (100) substrates by ECR-type ion beam sputtering at a substrate temperature of 200 ºC, and thermal stability of SiBCN films were investigated at 600 ºC, 700 ºC and 800 ºC in air. A composed Si-B-...

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Autores principales: Naohiro Hayashi, Junho Choi, Tomohisa Kumagai, Takahisa Kato, Masahiro Kawaguchi, Setsuo Nakao, Masami Ikeyama
Formato: article
Lenguaje:EN
Publicado: Japanese Society of Tribologists 2008
Materias:
silicon-boron-carbon-nitride (sibcn)
ecr sputtering
thermal stability
oxidation resistance
Physics
QC1-999
Engineering (General). Civil engineering (General)
TA1-2040
Mechanical engineering and machinery
TJ1-1570
Chemistry
QD1-999
Acceso en línea:https://doaj.org/article/db02dd82ffdf4ee3a37329cc0bc91e4e
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https://doaj.org/article/db02dd82ffdf4ee3a37329cc0bc91e4e

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