Thermal Stability of SiBCN Films

Silicon-Boron-Carbon-Nitride (SiBCN) thin films were deposited on Si (100) substrates by ECR-type ion beam sputtering at a substrate temperature of 200 ºC, and thermal stability of SiBCN films were investigated at 600 ºC, 700 ºC and 800 ºC in air. A composed Si-B-...

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Autores principales:	Naohiro Hayashi, Junho Choi, Tomohisa Kumagai, Takahisa Kato, Masahiro Kawaguchi, Setsuo Nakao, Masami Ikeyama
Formato:	article
Lenguaje:	EN
Publicado:	Japanese Society of Tribologists 2008
Materias:	silicon-boron-carbon-nitride (sibcn) ecr sputtering thermal stability oxidation resistance Physics QC1-999 Engineering (General). Civil engineering (General) TA1-2040 Mechanical engineering and machinery TJ1-1570 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/db02dd82ffdf4ee3a37329cc0bc91e4e
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spelling	oai:doaj.org-article:db02dd82ffdf4ee3a37329cc0bc91e4e2021-11-05T09:28:53ZThermal Stability of SiBCN Films1881-219810.2474/trol.3.254https://doaj.org/article/db02dd82ffdf4ee3a37329cc0bc91e4e2008-10-01T00:00:00Zhttps://www.jstage.jst.go.jp/article/trol/3/5/3_5_254/_pdf/-char/enhttps://doaj.org/toc/1881-2198Silicon-Boron-Carbon-Nitride (SiBCN) thin films were deposited on Si (100) substrates by ECR-type ion beam sputtering at a substrate temperature of 200 ºC, and thermal stability of SiBCN films were investigated at 600 ºC, 700 ºC and 800 ºC in air. A composed Si-B-C (Si plate and B4C target) target was used for the film deposition. The composition and chemical bonding structure of the prepared films were investigated by X-ray photoelectron spectroscopy and Fourier transform infrared spectrometer. Si-N bonds increased with increasing silicon content. Surface roughness of SiBCN films decreased with increasing Si content. Hardness of SiBCN films exhibited up to 22 GPa with increasing silicon content. SiBCN films showed no changes in chemical bonds after heating at 600 ºC. Even after heating at 700 ºC, SiBCN films maintained relatively high hardness, whereas hardness of SiBCN films was quietly reduced after heating at 800 ºC. Thermal stability of SiBCN films was improved with increasing Si content.Naohiro HayashiJunho ChoiTomohisa KumagaiTakahisa KatoMasahiro KawaguchiSetsuo NakaoMasami IkeyamaJapanese Society of Tribologistsarticlesilicon-boron-carbon-nitride (sibcn)ecr sputteringthermal stabilityoxidation resistancePhysicsQC1-999Engineering (General). Civil engineering (General)TA1-2040Mechanical engineering and machineryTJ1-1570ChemistryQD1-999ENTribology Online, Vol 3, Iss 5, Pp 254-258 (2008)
institution	DOAJ
collection	DOAJ
language	EN
topic	silicon-boron-carbon-nitride (sibcn) ecr sputtering thermal stability oxidation resistance Physics QC1-999 Engineering (General). Civil engineering (General) TA1-2040 Mechanical engineering and machinery TJ1-1570 Chemistry QD1-999
spellingShingle	silicon-boron-carbon-nitride (sibcn) ecr sputtering thermal stability oxidation resistance Physics QC1-999 Engineering (General). Civil engineering (General) TA1-2040 Mechanical engineering and machinery TJ1-1570 Chemistry QD1-999 Naohiro Hayashi Junho Choi Tomohisa Kumagai Takahisa Kato Masahiro Kawaguchi Setsuo Nakao Masami Ikeyama Thermal Stability of SiBCN Films
description	Silicon-Boron-Carbon-Nitride (SiBCN) thin films were deposited on Si (100) substrates by ECR-type ion beam sputtering at a substrate temperature of 200 ºC, and thermal stability of SiBCN films were investigated at 600 ºC, 700 ºC and 800 ºC in air. A composed Si-B-C (Si plate and B4C target) target was used for the film deposition. The composition and chemical bonding structure of the prepared films were investigated by X-ray photoelectron spectroscopy and Fourier transform infrared spectrometer. Si-N bonds increased with increasing silicon content. Surface roughness of SiBCN films decreased with increasing Si content. Hardness of SiBCN films exhibited up to 22 GPa with increasing silicon content. SiBCN films showed no changes in chemical bonds after heating at 600 ºC. Even after heating at 700 ºC, SiBCN films maintained relatively high hardness, whereas hardness of SiBCN films was quietly reduced after heating at 800 ºC. Thermal stability of SiBCN films was improved with increasing Si content.
format	article
author	Naohiro Hayashi Junho Choi Tomohisa Kumagai Takahisa Kato Masahiro Kawaguchi Setsuo Nakao Masami Ikeyama
author_facet	Naohiro Hayashi Junho Choi Tomohisa Kumagai Takahisa Kato Masahiro Kawaguchi Setsuo Nakao Masami Ikeyama
author_sort	Naohiro Hayashi
title	Thermal Stability of SiBCN Films
title_short	Thermal Stability of SiBCN Films
title_full	Thermal Stability of SiBCN Films
title_fullStr	Thermal Stability of SiBCN Films
title_full_unstemmed	Thermal Stability of SiBCN Films
title_sort	thermal stability of sibcn films
publisher	Japanese Society of Tribologists
publishDate	2008
url	https://doaj.org/article/db02dd82ffdf4ee3a37329cc0bc91e4e
work_keys_str_mv	AT naohirohayashi thermalstabilityofsibcnfilms AT junhochoi thermalstabilityofsibcnfilms AT tomohisakumagai thermalstabilityofsibcnfilms AT takahisakato thermalstabilityofsibcnfilms AT masahirokawaguchi thermalstabilityofsibcnfilms AT setsuonakao thermalstabilityofsibcnfilms AT masamiikeyama thermalstabilityofsibcnfilms
_version_	1718444379972042752

Thermal Stability of SiBCN Films

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