Thermal Stability of SiBCN Films
Silicon-Boron-Carbon-Nitride (SiBCN) thin films were deposited on Si (100) substrates by ECR-type ion beam sputtering at a substrate temperature of 200 ºC, and thermal stability of SiBCN films were investigated at 600 ºC, 700 ºC and 800 ºC in air. A composed Si-B-...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Japanese Society of Tribologists
2008
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/db02dd82ffdf4ee3a37329cc0bc91e4e |
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