Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

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Autores principales: Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo Kim
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/e9fc89a38b0c4ba2b1939ae82fa6fb02
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spelling oai:doaj.org-article:e9fc89a38b0c4ba2b1939ae82fa6fb022021-12-05T12:11:21ZAuthor Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors10.1038/s41598-021-02854-32045-2322https://doaj.org/article/e9fc89a38b0c4ba2b1939ae82fa6fb022021-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-02854-3https://doaj.org/toc/2045-2322Walid AmirJu‑Won ShinKi‑Yong ShinJae‑Moo KimChu‑Young ChoKyung‑Ho ParkTakuya HoshiTakuya TsutsumiHiroki SugiyamaHideaki MatsuzakiTae‑Woo KimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Walid Amir
Ju‑Won Shin
Ki‑Yong Shin
Jae‑Moo Kim
Chu‑Young Cho
Kyung‑Ho Park
Takuya Hoshi
Takuya Tsutsumi
Hiroki Sugiyama
Hideaki Matsuzaki
Tae‑Woo Kim
Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
format article
author Walid Amir
Ju‑Won Shin
Ki‑Yong Shin
Jae‑Moo Kim
Chu‑Young Cho
Kyung‑Ho Park
Takuya Hoshi
Takuya Tsutsumi
Hiroki Sugiyama
Hideaki Matsuzaki
Tae‑Woo Kim
author_facet Walid Amir
Ju‑Won Shin
Ki‑Yong Shin
Jae‑Moo Kim
Chu‑Young Cho
Kyung‑Ho Park
Takuya Hoshi
Takuya Tsutsumi
Hiroki Sugiyama
Hideaki Matsuzaki
Tae‑Woo Kim
author_sort Walid Amir
title Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
title_short Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
title_full Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
title_fullStr Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
title_full_unstemmed Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
title_sort author correction: a quantitative approach for trap analysis between al0.25ga0.75n and gan in high electron mobility transistors
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/e9fc89a38b0c4ba2b1939ae82fa6fb02
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