Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors

par Dae-Young Jeon, Yumin Koh, Chu-Young Cho, Kyung-Ho Park
Publié 2021

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

par Ho-Kun Sung, Tian Qiang, Zhao Yao, Yang Li, Qun Wu, Hee-Kwan Lee, Bum-Doo Park, Woong-Sun Lim, Kyung-Ho Park, Cong Wang
Publié 2017

Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

par Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo Kim
Publié 2021

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

par Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim
Publié 2021