Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

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Bibliographic Details
Main Authors: Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo Kim
Format: article
Language:EN
Published: Nature Portfolio 2021
Subjects:
Medicine
R
Science
Q
Online Access:https://doaj.org/article/e9fc89a38b0c4ba2b1939ae82fa6fb02
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