Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]

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Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]

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Détails bibliographiques
Auteurs principaux:	Li-E. Cai, Chao-Zhi Xu, Fei-Bing Xiong, Ming-Jie Zhao, Hai-Feng Lin, Hong-Yi Lin, Dong Sun
Format:	article
Langue:	EN
Publié:	AIP Publishing LLC 2021
Sujets:	Physics QC1-999
Accès en ligne:	https://doaj.org/article/ee695f3cf71b4c77a70594a2e23b96e8
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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