MoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation
Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resul...
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Autores principales: | Geun Yeol Bae, Jinsung Kim, Junyoung Kim, Siyoung Lee, Eunho Lee |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
MDPI AG
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/f4c695ccf55b45e79ceb9bab325cc14d |
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