MoTe<sub>2</sub> Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation
Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resul...
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| Auteurs principaux: | , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
MDPI AG
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/f4c695ccf55b45e79ceb9bab325cc14d |
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