Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction
Fabrication of photodetector devices by selective etching of 2D materials can enable broadband detection. Here, the authors design mono- and multi-layer nano-bridge multi-heterojunction photodetectors based on MoS2 with high responsivities of 2.67 × 106 A/W and 1.65 × 104 A/W in the visible–infrared...
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2019
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/f62d07bbb54d419fac39c2ce2a9b6298 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Soyez le premier à ajouter un commentaire!