A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Abstract The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experimentally analyzed because the Al0.25Ga0.7...

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Autores principales:	Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
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spelling	oai:doaj.org-article:fab21a9fee9a4362ab6f717d38ac996d2021-11-21T12:19:28ZA quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors10.1038/s41598-021-01768-42045-2322https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d2021-11-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-01768-4https://doaj.org/toc/2045-2322Abstract The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experimentally analyzed because the Al0.25Ga0.75N barrier layer functions as a dielectric owing to its high dielectric constant. The interface trap density D it and border trap density N bt were extracted from a long-channel field-effect transistor (FET), conventionally known as a FATFET structure, via frequency-dependent capacitance–voltage (C–V) and conductance–voltage (G–V) measurements. The minimum D it value extracted by the conventional conductance method was 2.5 × 1012 cm−2·eV−1, which agreed well with the actual transistor subthreshold swing of around 142 mV·dec−1. The border trap density N bt was also extracted from the frequency-dependent C–V characteristics using the distributed circuit model, and the extracted value was 1.5 × 1019 cm−3·eV−1. Low-frequency (1/f) noise measurement provided a clearer picture of the trapping–detrapping phenomena in the Al0.25Ga0.75N layer. The value of the border trap density extracted using the carrier-number-fluctuation (CNF) model was 1.3 × 1019 cm−3·eV−1, which is of a similar level to the extracted value from the distributed circuit model.Walid AmirJu-Won ShinKi-Yong ShinJae-Moo KimChu-Young ChoKyung-Ho ParkTakuya HoshiTakuya TsutsumiHiroki SugiyamaHideaki MatsuzakiTae-Woo KimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Walid Amir Ju-Won Shin Ki-Yong Shin Jae-Moo Kim Chu-Young Cho Kyung-Ho Park Takuya Hoshi Takuya Tsutsumi Hiroki Sugiyama Hideaki Matsuzaki Tae-Woo Kim A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
description	Abstract The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experimentally analyzed because the Al0.25Ga0.75N barrier layer functions as a dielectric owing to its high dielectric constant. The interface trap density D it and border trap density N bt were extracted from a long-channel field-effect transistor (FET), conventionally known as a FATFET structure, via frequency-dependent capacitance–voltage (C–V) and conductance–voltage (G–V) measurements. The minimum D it value extracted by the conventional conductance method was 2.5 × 1012 cm−2·eV−1, which agreed well with the actual transistor subthreshold swing of around 142 mV·dec−1. The border trap density N bt was also extracted from the frequency-dependent C–V characteristics using the distributed circuit model, and the extracted value was 1.5 × 1019 cm−3·eV−1. Low-frequency (1/f) noise measurement provided a clearer picture of the trapping–detrapping phenomena in the Al0.25Ga0.75N layer. The value of the border trap density extracted using the carrier-number-fluctuation (CNF) model was 1.3 × 1019 cm−3·eV−1, which is of a similar level to the extracted value from the distributed circuit model.
format	article
author	Walid Amir Ju-Won Shin Ki-Yong Shin Jae-Moo Kim Chu-Young Cho Kyung-Ho Park Takuya Hoshi Takuya Tsutsumi Hiroki Sugiyama Hideaki Matsuzaki Tae-Woo Kim
author_facet	Walid Amir Ju-Won Shin Ki-Yong Shin Jae-Moo Kim Chu-Young Cho Kyung-Ho Park Takuya Hoshi Takuya Tsutsumi Hiroki Sugiyama Hideaki Matsuzaki Tae-Woo Kim
author_sort	Walid Amir
title	A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
title_short	A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
title_full	A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
title_fullStr	A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
title_full_unstemmed	A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
title_sort	quantitative approach for trap analysis between al0.25ga0.75n and gan in high electron mobility transistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
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A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

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