A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Abstract The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experimentally analyzed because the Al0.25Ga0.7...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim
Format: article
Langue:EN
Publié: Nature Portfolio 2021
Sujets:
R
Q
Accès en ligne:https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires