A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
Abstract The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experimentally analyzed because the Al0.25Ga0.7...
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Auteurs principaux: | Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim |
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Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
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Accès en ligne: | https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d |
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