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441por Sirri Batuhan Kalkan, Emad Najafidehaghani, Ziyang Gan, Fabian Alexander Christian Apfelbeck, Uwe Hübner, Antony George, Andrey Turchanin, Bert Nickel“... and antiambipolar field-effect transistors. Such vdW p-n heterojunction devices open up a wide range of possible...”
Publicado 2021
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442por Daniil Marinov, Jean-François de Marneffe, Quentin Smets, Goutham Arutchelvan, Kristof M. Bal, Ekaterina Voronina, Tatyana Rakhimova, Yuri Mankelevich, Salim El Kazzi, Ankit Nalin Mehta, Pieter-Jan Wyndaele, Markus Hartmut Heyne, Jianran Zhang, Patrick C. With, Sreetama Banerjee, Erik C. Neyts, Inge Asselberghs, Dennis Lin, Stefan De Gendt“... elucidated in this work are tested on back-gated field-effect transistors, confirming that transport...”
Publicado 2021
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443por Hyojung Kim, Jongwoo Park, Sora Bak, Jungmin Park, Changwoo Byun, Changyong Oh, Bo Sung Kim, Chanhee Han, Jongmin Yoo, Dongbhin Kim, Jangkun Song, Pyungho Choi, Byoungdeog Choi“... indium gallium zinc oxide (a-IGZO) thin-film transistors (TFT), and actual display panels to analyze...”
Publicado 2021
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444por Joonas Isometsä, Tsun Hang Fung, Toni P. Pasanen, Hanchen Liu, Marko Yli-koski, Ville Vähänissi, Hele Savin“... solar cells, and field effect transistors. Nevertheless, efficient surface passivation of Ge has been...”
Publicado 2021
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445por Xinke Liu, Hsien-Chin Chiu, Chia-Hao Liu, Hsuan-Ling Kao, Chao-Wei Chiu, Hsiang-Chun Wang, Jianwei Ben, Wei He, Chong-Rong Huang“...Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed...”
Publicado 2020
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446por Mohammad Zulqarnain, Stefano Stanzione, Ganesh Rathinavel, Steve Smout, Myriam Willegems, Kris Myny, Eugenio Cantatore“... Gallium Zinc Oxide (a-IGZO) Thin Film Transistors (TFTs) fabricated on flexible substrates...”
Publicado 2020
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447por Julian Büchel, Dmitrii Zendrikov, Sergio Solinas, Giacomo Indiveri, Dylan R. Muir“... are sensitive to process-induced variation among transistors in a chip (“device mismatch”). For neuromorphic...”
Publicado 2021
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448“... AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN...”
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449por Pankaj B. Agarwal, Navneet Kumar Thakur, Rishi Sharma, Parul Singh, Joshy Joseph, Chaturvedula Tripura“...Abstract Biosensors based on liquid-gated carbon nanotubes field-effect transistors (LG-CNTFETs...”
Publicado 2021
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450“... at the secondary side can be shared for lowering the conduction loss of the synchronous transistors. Finally, a...”
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451por Nahier Aldhafferi“... sensors, short wavelength light emitting diodes, biomedical imaging, display light sources, transistors...”
Publicado 2021
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452por Mario Moreno, Arturo Ponce, Arturo Galindo, Eduardo Ortega, Alfredo Morales, Javier Flores, Roberto Ambrosio, Alfonso Torres, Luis Hernandez, Hector Vazquez-Leal, Gilles Patriarche, Pere Roca i Cabarrocas“... characteristics are of importance for the development of thin film transistors (TFTs), thin film solar cells...”
Publicado 2021
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453por E. V. Yagup“... transistors is connected according to a parallel type scheme. We propose an algorithm for calculating...”
Publicado 2017
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454por Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, Ching-Yi Hsu, Ting-En Hsieh, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang“...A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate...”
Publicado 2018
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455“... device, called ion-selective field-effect transistors (ISFET). The ISFET is based on the current through...”
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456por Asif Ali, So-Young Kim, Muhammad Hussain, Syed Hassan Abbas Jaffery, Ghulam Dastgeer, Sajjad Hussain, Bach Thi Phuong Anh, Jonghwa Eom, Byoung Hun Lee, Jongwan Jung“... (DUV) light irradiation in different radiation environments. The graphene field-effect transistors...”
Publicado 2021
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457“... transistors (MIS-HEMTs) were fabricated using silicon nitride (SiN) passivation layer. This layer...”
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458por Jianming Lei, Rui Wang, Guo Yang, Jin Wang, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng“... high-electron-mobility transistors is validated by means of a switching power converter with floating...”
Publicado 2019
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459“...> shift of driving thin-film transistors (TFTs) based on the equation derived from the sensing line...”
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460“... transistors operating in linear region. Based on fundamental analysis, <inline-formula> <tex-math notation...”
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