Mostrando 441 - 460 Resultados de 461 Para Buscar '"transistor"', tiempo de consulta: 0.06s Limitar resultados
  1. 441
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  3. 443
    ... indium gallium zinc oxide (a-IGZO) thin-film transistors (TFT), and actual display panels to analyze...
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  4. 444
    ... solar cells, and field effect transistors. Nevertheless, efficient surface passivation of Ge has been...
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  5. 445
    ...Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed...
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  6. 446
    ... Gallium Zinc Oxide (a-IGZO) Thin Film Transistors (TFTs) fabricated on flexible substrates...
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  7. 447
    ... are sensitive to process-induced variation among transistors in a chip (“device mismatch”). For neuromorphic...
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  8. 448
    ... AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN...
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  9. 449
  10. 450
    por Sen-Tung Wu, Yu-Ting Cheng
    Publicado 2021
    ... at the secondary side can be shared for lowering the conduction loss of the synchronous transistors. Finally, a...
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  11. 451
    por Nahier Aldhafferi
    Publicado 2021
    ... sensors, short wavelength light emitting diodes, biomedical imaging, display light sources, transistors...
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  12. 452
  13. 453
    por E. V. Yagup
    Publicado 2017
    ... transistors is connected according to a parallel type scheme. We propose an algorithm for calculating...
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  15. 455
    ... device, called ion-selective field-effect transistors (ISFET). The ISFET is based on the current through...
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  16. 456
  17. 457
    ... transistors (MIS-HEMTs) were fabricated using silicon nitride (SiN) passivation layer. This layer...
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  18. 458
    ... high-electron-mobility transistors is validated by means of a switching power converter with floating...
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  19. 459
    ...> shift of driving thin-film transistors (TFTs) based on the equation derived from the sensing line...
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  20. 460
    ... transistors operating in linear region. Based on fundamental analysis, <inline-formula> <tex-math notation...
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