-
1por Agus Budi Dharmawan, Shinta Mariana, Gregor Scholz, Philipp Hörmann, Torben Schulze, Kuwat Triyana, Mayra Garcés-Schröder, Ingo Rustenbeck, Karsten Hiller, Hutomo Suryo Wasisto, Andreas WaagEnlace del recurso
Publicado 2021
article -
2Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronicspor Muhammad Fahlesa Fatahilah, Feng Yu, Klaas Strempel, Friedhard Römer, Dario Maradan, Matteo Meneghini, Andrey Bakin, Frank Hohls, Hans Werner Schumacher, Bernd Witzigmann, Andreas Waag, Hutomo Suryo WasistoEnlace del recurso
Publicado 2019
article -
3Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structurespor Linus Krieg, Florian Meierhofer, Sascha Gorny, Stefan Leis, Daniel Splith, Zhipeng Zhang, Holger von Wenckstern, Marius Grundmann, Xiaoxue Wang, Jana Hartmann, Christoph Margenfeld, Irene Manglano Clavero, Adrian Avramescu, Tilman Schimpke, Dominik Scholz, Hans-Jürgen Lugauer, Martin Strassburg, Jörgen Jungclaus, Steffen Bornemann, Hendrik Spende, Andreas Waag, Karen K. Gleason, Tobias VossEnlace del recurso
Publicado 2020
article