Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

par Muhammad Fahlesa Fatahilah, Feng Yu, Klaas Strempel, Friedhard Römer, Dario Maradan, Matteo Meneghini, Andrey Bakin, Frank Hohls, Hans Werner Schumacher, Bernd Witzigmann, Andreas Waag, Hutomo Suryo Wasisto
Publié 2019