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1Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronicspor Muhammad Fahlesa Fatahilah, Feng Yu, Klaas Strempel, Friedhard Römer, Dario Maradan, Matteo Meneghini, Andrey Bakin, Frank Hohls, Hans Werner Schumacher, Bernd Witzigmann, Andreas Waag, Hutomo Suryo WasistoEnlace del recurso
Publicado 2019
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