Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+...

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Bibliographic Details
Main Authors: Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Kensuke Murai, Masato Kiuchi
Format: article
Language:EN
Published: Public Library of Science (PLoS) 2021
Subjects:
R
Q
Online Access:https://doaj.org/article/8d810019373e4833928b209f3d68ea73
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