Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+...

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Autores principales:	Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Kensuke Murai, Masato Kiuchi
Formato:	article
Lenguaje:	EN
Publicado:	Public Library of Science (PLoS) 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/8d810019373e4833928b209f3d68ea73
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spelling	oai:doaj.org-article:8d810019373e4833928b209f3d68ea732021-11-04T06:49:43ZLow-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films1932-6203https://doaj.org/article/8d810019373e4833928b209f3d68ea732021-01-01T00:00:00Zhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC8550407/?tool=EBIhttps://doaj.org/toc/1932-6203We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+ and N+ as the ion beam. The energy of the ion beam was 101 eV. Temperature of the Si substrate was set at 540 °C. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar+ ions were injected in conjunction with HMDS. On the other hand, in the cases of N+ ion beam irradiation, silicon nitride films involving small amount of carbon were formed. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections.Satoru YoshimuraSatoshi SugimotoTakae TakeuchiKensuke MuraiMasato KiuchiPublic Library of Science (PLoS)articleMedicineRScienceQENPLoS ONE, Vol 16, Iss 10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Satoru Yoshimura Satoshi Sugimoto Takae Takeuchi Kensuke Murai Masato Kiuchi Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films
description	We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+ and N+ as the ion beam. The energy of the ion beam was 101 eV. Temperature of the Si substrate was set at 540 °C. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar+ ions were injected in conjunction with HMDS. On the other hand, in the cases of N+ ion beam irradiation, silicon nitride films involving small amount of carbon were formed. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections.
format	article
author	Satoru Yoshimura Satoshi Sugimoto Takae Takeuchi Kensuke Murai Masato Kiuchi
author_facet	Satoru Yoshimura Satoshi Sugimoto Takae Takeuchi Kensuke Murai Masato Kiuchi
author_sort	Satoru Yoshimura
title	Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films
title_short	Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films
title_full	Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films
title_fullStr	Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films
title_full_unstemmed	Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films
title_sort	low-energy ar+ and n+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing sic and carbon containing sin films
publisher	Public Library of Science (PLoS)
publishDate	2021
url	https://doaj.org/article/8d810019373e4833928b209f3d68ea73
work_keys_str_mv	AT satoruyoshimura lowenergyarandnionbeaminducedchemicalvapordepositionusinghexamethyldisilazanefortheformationofnitrogencontainingsicandcarboncontainingsinfilms AT satoshisugimoto lowenergyarandnionbeaminducedchemicalvapordepositionusinghexamethyldisilazanefortheformationofnitrogencontainingsicandcarboncontainingsinfilms AT takaetakeuchi lowenergyarandnionbeaminducedchemicalvapordepositionusinghexamethyldisilazanefortheformationofnitrogencontainingsicandcarboncontainingsinfilms AT kensukemurai lowenergyarandnionbeaminducedchemicalvapordepositionusinghexamethyldisilazanefortheformationofnitrogencontainingsicandcarboncontainingsinfilms AT masatokiuchi lowenergyarandnionbeaminducedchemicalvapordepositionusinghexamethyldisilazanefortheformationofnitrogencontainingsicandcarboncontainingsinfilms
_version_	1718445036355452928

Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

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