Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
Atomic layer deposition of high-quality thin oxide layers is crucial for many modern semiconductor electronic devices. Here, the authors explore the surface chemistry during the initial deposition and observe a previously unknown two-step process, with promise for an improved self-cleaning effect.
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| Auteurs principaux: | , , , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2018
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/a09ceeac62c14ef0b15f85073d70ab40 |
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