Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide

Atomic layer deposition of high-quality thin oxide layers is crucial for many modern semiconductor electronic devices. Here, the authors explore the surface chemistry during the initial deposition and observe a previously unknown two-step process, with promise for an improved self-cleaning effect.

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Autores principales:	Rainer Timm, Ashley R. Head, Sofie Yngman, Johan V. Knutsson, Martin Hjort, Sarah R. McKibbin, Andrea Troian, Olof Persson, Samuli Urpelainen, Jan Knudsen, Joachim Schnadt, Anders Mikkelsen
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/a09ceeac62c14ef0b15f85073d70ab40
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spelling	oai:doaj.org-article:a09ceeac62c14ef0b15f85073d70ab402021-12-02T14:39:48ZSelf-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide10.1038/s41467-018-03855-z2041-1723https://doaj.org/article/a09ceeac62c14ef0b15f85073d70ab402018-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-03855-zhttps://doaj.org/toc/2041-1723Atomic layer deposition of high-quality thin oxide layers is crucial for many modern semiconductor electronic devices. Here, the authors explore the surface chemistry during the initial deposition and observe a previously unknown two-step process, with promise for an improved self-cleaning effect.Rainer TimmAshley R. HeadSofie YngmanJohan V. KnutssonMartin HjortSarah R. McKibbinAndrea TroianOlof PerssonSamuli UrpelainenJan KnudsenJoachim SchnadtAnders MikkelsenNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Rainer Timm Ashley R. Head Sofie Yngman Johan V. Knutsson Martin Hjort Sarah R. McKibbin Andrea Troian Olof Persson Samuli Urpelainen Jan Knudsen Joachim Schnadt Anders Mikkelsen Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
description	Atomic layer deposition of high-quality thin oxide layers is crucial for many modern semiconductor electronic devices. Here, the authors explore the surface chemistry during the initial deposition and observe a previously unknown two-step process, with promise for an improved self-cleaning effect.
format	article
author	Rainer Timm Ashley R. Head Sofie Yngman Johan V. Knutsson Martin Hjort Sarah R. McKibbin Andrea Troian Olof Persson Samuli Urpelainen Jan Knudsen Joachim Schnadt Anders Mikkelsen
author_facet	Rainer Timm Ashley R. Head Sofie Yngman Johan V. Knutsson Martin Hjort Sarah R. McKibbin Andrea Troian Olof Persson Samuli Urpelainen Jan Knudsen Joachim Schnadt Anders Mikkelsen
author_sort	Rainer Timm
title	Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
title_short	Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
title_full	Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
title_fullStr	Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
title_full_unstemmed	Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
title_sort	self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/a09ceeac62c14ef0b15f85073d70ab40
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Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide

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