InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with <inline-formula> <tex-math notation="LaTeX">$W_{\mathrm{ fin}}$ </tex-math></inline-formula> down to 20 nm, EOT of 2.1 nm, and <inline-formula&...
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| Main Authors: | , , , , , , , |
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| Format: | article |
| Language: | EN |
| Published: |
IEEE
2018
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| Subjects: | |
| Online Access: | https://doaj.org/article/c5dab5b9ff754d93ad7d8c0994cb13d9 |
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