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201“...–O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio frequency (RF...”
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202por L. L. Lev, I. O. Maiboroda, M.-A. Husanu, E. S. Grichuk, N. K. Chumakov, I. S. Ezubchenko, I. A. Chernykh, X. Wang, B. Tobler, T. Schmitt, M. L. Zanaveskin, V. G. Valeyev, V. N. Strocov“...-electron-mobility transistors. Here, the authors probe the electronic structure in GaN/AlGaN...”
Publicado 2018
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203Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper“... transistor (HEMT) process using i‐line stepper lithography and a thermal reflow technique. Optimizing thermal...”
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204
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205“... and transistor-like device design, thereby achieving the instantaneous power density over 10 MW/m2 at the low...”
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206“...-dimensional (3D) channel field-effect transistors (FETs), such as fin-shaped FETs (FinFETs) and gate-all...”
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207
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208“... transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which was higher...”
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209por Tian-Rui Cui, Yan-Cong Qiao, Jian-Wei Gao, Chun-Hua Wang, Yu Zhang, Lin Han, Yi Yang, Tian-Ling Ren“... a laser-induced graphene field-effect transistor (LIG-FET) for detecting SARS-CoV-2. The FET...”
Publicado 2021
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210“...-semiconductor field-effect transistors (MOSFETs) with high mobility, a high on-off ratio, and low power...”
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211por Yang Wang, Gaoqiang Deng, Jie Ji, Haotian Ma, Shixu Yang, Jiaqi Yu, Yunfei Niu, Yusen Wang, Chao Lu, Yang Liu, Ke Tang, Wei Guo, Baolin Zhang, Yuantao ZhangEnlace del recurso
Publicado 2021
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212por Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim“... in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga...”
Publicado 2021
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213
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214“... transistor (HEMT) and wide-bandwidth operational amplifier was developed and implemented. The driving current...”
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215por Jong Woan Choi, Changhoon Lee, Eiji Osawa, Ji Young Lee, Jung Chul Sur, Kee Hag Lee“... of the surface of the gate electrode in a C<sub>70</sub> single-electron transistor (SET). To understand electron...”
Publicado 2021
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216“...) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better...”
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218
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219por Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo KimEnlace del recurso
Publicado 2021
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220por Sakhone Pharkphoumy, Vallivedu Janardhanam, Tae-Hoon Jang, Jaejun Park, Kyu-Hwan Shim, Chel-Jong Choi“... and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown...”
Publicado 2021
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